抄録
An interference ferromagnet/semiconductor/ferromagnet transistor is proposed, where the relative conductance difference between parallel and antiparallel magnetization oscillates as a function of gate voltage. The characteristics of a one-dimensional as well as a two-dimensional structure are calculated and compared. In both cases the interferences result in an enhanced spin signal. It is shown that by using the spin filtering effect of an interface barrier the signal can be further increased.
| 本文言語 | English |
|---|---|
| ジャーナル | Physical Review B - Condensed Matter and Materials Physics |
| 巻 | 64 |
| 号 | 12 |
| DOI | |
| 出版ステータス | Published - 2001 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学