Quantum mechanical features of even the most basic of semiconductor components can be expected to become of paramount importance for future nanoelectronics and quantum information technology. Here, we show that the conductivity of even a two-dimensionally extended double-gate silicon-on-insulator metal-oxide-silicon field-effect transistor can develop a distinct peak structure in its top-gate voltage dependence at low temperatures, due to the discreteness of sub-band edges resulting from quantum mechanical confinement in the vertical gating direction. Our findings are confirmed using low-temperature magnetic field measurements.
|ジャーナル||IEEE Transactions on Nanotechnology|
|出版ステータス||Published - 2006 9月|
ASJC Scopus subject areas
- コンピュータ サイエンスの応用