Intertwined magnetic, structural, and electronic transitions in V2O3

Benjamin A. Frandsen, Yoav Kalcheim, Ilya Valmianski, Alexander S. Mcleod, Z. Guguchia, Sky C. Cheung, Alannah M. Hallas, Murray N. Wilson, Yipeng Cai, Graeme M. Luke, Z. Salman, A. Suter, T. Prokscha, Taito Murakami, Hiroshi Kageyama, D. N. Basov, Ivan K. Schuller, Yasutomo J. Uemura

研究成果: Article査読

10 被引用数 (Scopus)


We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V2O3 using low-energy muon spin relaxation, X-ray diffraction, and nanoscale-resolved near-field infrared spectroscopic techniques. The measurements provide a detailed characterization of the thermal evolution of the magnetic, structural, and electronic phase transitions occurring in a wide temperature range, including quantitative measurements of the high- A nd low-temperature phase fractions for each transition. The results reveal a stable coexistence of the high- A nd low-temperature phases over a broad temperature range throughout the transition. Careful comparison of temperature dependence of the different measurements, calibrated by the resistance of the sample, demonstrates that the electronic, magnetic, and structural degrees of freedom remain tightly coupled to each other during the transition process. We also find evidence for antiferromagnetic fluctuations in the vicinity of the phase transition, highlighting the important role of the magnetic degree of freedom in the metal-insulator transition.

ジャーナルPhysical Review B
出版ステータスPublished - 2019 12月 23

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学


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