Inverse TMR effect in Co0.9Fe0.1/ SrTiO3/La0.7MnO3 tunnel junctions

M. Sugiyama, H. Asano, M. Matsui, J. Hayakawa, S. Kokado, K. Itou, A. Sakuma, M. Ichimura

研究成果: Conference article査読


Magnetic tunnel junctions of Co0.9Fe0.1/SrTiO3 (STO)/ La0.7Sr0.3MnO3 (LSMO) with a spin-valve structure having an antiferromagnetic MnIr layer have been fabricated by sputtering. Junction magnetoresistance (MR) behavior and its dependence on the bias voltage are examined for junctions with epitaxial STO barrier formed under different sputtering conditions. Spin dependent transport measurements show that these junctions exhibit spin-valve type MR loops with an inverse (positive) MR of the ratio of 14-22% at 4.2 K. The inverse MR observed is asymmetric with respect to the bias voltage direction. Stoichiometric STO barrier, as characterized by Rutherford backscattering (RBS) analysis, is found to result in very large asymmetric bias dependence, while the junctions with nonstoichiometric STO barrier exhibit the symmetric bias dependence. Our results suggest that the nonstoichiometry of STO barrier modifies the electronic structures of electrode/barrier interfaces, and thereby reducing the asymmetry of bias voltage dependence of junction MR.

ジャーナルMaterials Research Society Symposium - Proceedings
出版ステータスPublished - 2002 1月 1
イベントSpintronics - Boston, MA, United States
継続期間: 2001 11月 262001 11月 29

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学


「Inverse TMR effect in Co0.9Fe0.1/ SrTiO3/La0.7MnO3 tunnel junctions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。