TY - GEN
T1 - Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range
AU - Schwarz, Ulrich T.
AU - Braun, Harald
AU - Kojima, Kazunobu
AU - Funato, Mitsuru
AU - Kawakami, Yoichi
AU - Nagahama, Shinichi
AU - Mukai, Takashi
PY - 2007/5/24
Y1 - 2007/5/24
N2 - We measure gain spectra for commercial (Al,In)GaN laser diodes with peak gain wavelengths of 470 nm, 440 nm, 405 nm, and 375 nm, covering the spectral range accessible with electrical pumping. For this systematic study we employ the Hakki-Paoli method, i.e. the laser diodes are electrically driven and gain is measured below threshold current densities, The measured gain spectra are reasonable for a 2D carrier system and understandable when we take into account homogeneous and inhomogeneous broadening. While inhomogeneous broadening is almost negligible for the near UV laser diode, it becomes the dominant broadening mechanism for the longer wavelength laser diodes. We compare the gain spectra with two models describing the inhomogeneous broadening. The first model assumes a constant carrier density, while the second model assumes a constant quasi Fermi level. Both are in agreement with the experimental gain spectra, but predict very different carrier densities. We see our measurements as providing a set of standard gain spectra for similar laser diodes covering a wide spectral range which can be used to develop and calibrate theoretical manybody gain simulations.
AB - We measure gain spectra for commercial (Al,In)GaN laser diodes with peak gain wavelengths of 470 nm, 440 nm, 405 nm, and 375 nm, covering the spectral range accessible with electrical pumping. For this systematic study we employ the Hakki-Paoli method, i.e. the laser diodes are electrically driven and gain is measured below threshold current densities, The measured gain spectra are reasonable for a 2D carrier system and understandable when we take into account homogeneous and inhomogeneous broadening. While inhomogeneous broadening is almost negligible for the near UV laser diode, it becomes the dominant broadening mechanism for the longer wavelength laser diodes. We compare the gain spectra with two models describing the inhomogeneous broadening. The first model assumes a constant carrier density, while the second model assumes a constant quasi Fermi level. Both are in agreement with the experimental gain spectra, but predict very different carrier densities. We see our measurements as providing a set of standard gain spectra for similar laser diodes covering a wide spectral range which can be used to develop and calibrate theoretical manybody gain simulations.
KW - Hakki-Paoli method
KW - InGaN laser diodes
KW - Inhomogeneous broadening
KW - Localized states
KW - Optical gain
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U2 - 10.1117/12.705867
DO - 10.1117/12.705867
M3 - Conference contribution
AN - SCOPUS:34248681551
SN - 0819465984
SN - 9780819465986
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Novel In-Plane Semiconductor Lasers VI
T2 - Novel In-Plane Semiconductor Lasers VI
Y2 - 22 January 2007 through 25 January 2007
ER -