Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range

Ulrich T. Schwarz, Harald Braun, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami, Shinichi Nagahama, Takashi Mukai

研究成果: Conference contribution

19 被引用数 (Scopus)


We measure gain spectra for commercial (Al,In)GaN laser diodes with peak gain wavelengths of 470 nm, 440 nm, 405 nm, and 375 nm, covering the spectral range accessible with electrical pumping. For this systematic study we employ the Hakki-Paoli method, i.e. the laser diodes are electrically driven and gain is measured below threshold current densities, The measured gain spectra are reasonable for a 2D carrier system and understandable when we take into account homogeneous and inhomogeneous broadening. While inhomogeneous broadening is almost negligible for the near UV laser diode, it becomes the dominant broadening mechanism for the longer wavelength laser diodes. We compare the gain spectra with two models describing the inhomogeneous broadening. The first model assumes a constant carrier density, while the second model assumes a constant quasi Fermi level. Both are in agreement with the experimental gain spectra, but predict very different carrier densities. We see our measurements as providing a set of standard gain spectra for similar laser diodes covering a wide spectral range which can be used to develop and calibrate theoretical manybody gain simulations.

ホスト出版物のタイトルNovel In-Plane Semiconductor Lasers VI
出版ステータスPublished - 2007 5月 24
イベントNovel In-Plane Semiconductor Lasers VI - San Jose, CA, United States
継続期間: 2007 1月 222007 1月 25


名前Proceedings of SPIE - The International Society for Optical Engineering


ConferenceNovel In-Plane Semiconductor Lasers VI
国/地域United States
CitySan Jose, CA

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


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