TY - GEN
T1 - Investigation on solution-processed In-Si-O thin-film transistor via spin-coating method
AU - Hoang, Ha
AU - Hori, Tatsuki
AU - Yasuda, To Oru
AU - Kizu, Takio
AU - Tsukagoshi, Kazuhito
AU - Nabatame, Toshihide
AU - Trinh, Bui Nguyen Quoc
AU - Fujiwara, Akihiko
N1 - Funding Information:
This work was partially supported by the Hyogo Overseas Research Network (HORN) Program, Hyogo Earthquake Memorial 21st Century Research Institute, and Grants-in-Aid for Scientific Research (grant No. JP15H03568). Bui Nguyen Quoc Trinh would like to acknowledge the support provided by the Vietnam National Foundation for Science and Technology Development (NAFOSTED; grant No. 103.02-2012.81).
Publisher Copyright:
© 2018 FTFMD.
PY - 2018/8/15
Y1 - 2018/8/15
N2 - In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si-doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs was characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850°C regardless the film thickness. The best ISO TFT showed the value of VT of-5 V, μ of1.32 cm2/Vs, SS of1 V/dec, and on/off current ratio about 107.
AB - In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si-doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs was characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850°C regardless the film thickness. The best ISO TFT showed the value of VT of-5 V, μ of1.32 cm2/Vs, SS of1 V/dec, and on/off current ratio about 107.
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U2 - 10.23919/AM-FPD.2018.8437420
DO - 10.23919/AM-FPD.2018.8437420
M3 - Conference contribution
AN - SCOPUS:85053117417
SN - 9784990875350
T3 - AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings
BT - AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018
Y2 - 3 July 2018 through 6 July 2018
ER -