Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

O. Fukuoka; N. Matsunami; M. Tazawa; T. Shimura; M. Sataka; Hiroyuki Sugai; S. Okayasu

doi:10.1016/j.nimb.2006.04.146

Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

O. Fukuoka, N. Matsunami, M. Tazawa, T. Shimura, M. Sataka, Hiroyuki Sugai, S. Okayasu

工学研究科・量子エネルギー工学専攻

研究成果: Article › 査読

29 被引用数 (Scopus)

抄録

Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO₂ glass at 400 °C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification.

本文言語	English
ページ（範囲）	295-299
ページ数	5
ジャーナル	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
巻	250
号	1-2 SPEC. ISS.
DOI	https://doi.org/10.1016/j.nimb.2006.04.146
出版ステータス	Published - 2006 9月 1

ASJC Scopus subject areas

核物理学および高エネルギー物理学
器械工学

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10.1016/j.nimb.2006.04.146

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abstract = "Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO2 glass at 400 °C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification.",

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T1 - Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

AU - Fukuoka, O.

AU - Matsunami, N.

AU - Tazawa, M.

AU - Shimura, T.

AU - Sataka, M.

AU - Sugai, Hiroyuki

AU - Okayasu, S.

PY - 2006/9/1

Y1 - 2006/9/1

N2 - Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO2 glass at 400 °C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification.

AB - Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO2 glass at 400 °C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification.

KW - Al-doped ZnO

KW - Conductivity

KW - Ion irradiation

KW - Optical property

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Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

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