TY - GEN
T1 - L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process
AU - Ono, M.
AU - Suematsu, N.
AU - Yamaguchi, Y.
AU - Ueda, K.
AU - Komurasaki, H.
AU - Kubo, S.
AU - Iyama, Y.
AU - Ishida, O.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - In this paper, on-chip matching Si-MMIC low noise amplifier (LNA) was fabricated in a 0.35 μm SOI CMOS process. This LNA offers 8.7 dB gain, 4.2 dB NF,-2 dBm IIP3 at 2.1 GHz with 3 V, 3 mA DC power. The reduction of the dielectric loss of the spiral inductor is also discussed by referring to the extraction result of the equivalent circuit parameter.
AB - In this paper, on-chip matching Si-MMIC low noise amplifier (LNA) was fabricated in a 0.35 μm SOI CMOS process. This LNA offers 8.7 dB gain, 4.2 dB NF,-2 dBm IIP3 at 2.1 GHz with 3 V, 3 mA DC power. The reduction of the dielectric loss of the spiral inductor is also discussed by referring to the extraction result of the equivalent circuit parameter.
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U2 - 10.1109/SMIC.1998.750200
DO - 10.1109/SMIC.1998.750200
M3 - Conference contribution
AN - SCOPUS:85024718851
T3 - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
SP - 90
EP - 93
BT - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
A2 - Kayali, Sammy
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
Y2 - 18 September 1998 through 18 September 1998
ER -