TY - JOUR
T1 - Laser etching on the Cl-saturated Si(111)7*7 surface at 266 nm studied by scanning tunnelling microscopy
AU - Suguri, M.
AU - Hashizume, T.
AU - Hasegawa, Y.
AU - Sakurai, T.
AU - Murata, Y.
PY - 1992/12/1
Y1 - 1992/12/1
N2 - Using scanning tunnelling microscopy, the authors have observed structural modifications of the chlorinated Si(111)7*7 surface induced by 266 nm laser irradiation. At a very low laser fluence of 0.7 mJ cm-2, at which thermal desorption can be ignored, a periodic striped pattern along the (110) direction of the Si(111) surface is imaged. This pattern consists of flat terraces and narrow grooves of approximately 60 and approximately 10 AA in width, respectively.
AB - Using scanning tunnelling microscopy, the authors have observed structural modifications of the chlorinated Si(111)7*7 surface induced by 266 nm laser irradiation. At a very low laser fluence of 0.7 mJ cm-2, at which thermal desorption can be ignored, a periodic striped pattern along the (110) direction of the Si(111) surface is imaged. This pattern consists of flat terraces and narrow grooves of approximately 60 and approximately 10 AA in width, respectively.
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U2 - 10.1088/0953-8984/4/44/005
DO - 10.1088/0953-8984/4/44/005
M3 - Article
AN - SCOPUS:0043013306
SN - 0953-8984
VL - 4
SP - 8435
EP - 8440
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
IS - 44
M1 - 005
ER -