Logic gates based on electrically driven nanoelectromechanical switches

Nguyen Van Toan; Dong Zhao; Naoki Inomata; Takahito Ono

doi:10.1002/tee.22814

Logic gates based on electrically driven nanoelectromechanical switches

Nguyen Van Toan, Dong Zhao, Naoki Inomata, Takahito Ono

工学研究科・機械機能創成専攻

研究成果: Letter › 査読

2 被引用数 (Scopus)

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This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated.

本文言語	English
ページ（範囲）	335-336
ページ数	2
ジャーナル	IEEJ Transactions on Electrical and Electronic Engineering
巻	14
号	2
DOI	https://doi.org/10.1002/tee.22814
出版ステータス	Published - 2019 2月 1

ASJC Scopus subject areas

電子工学および電気工学

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10.1002/tee.22814

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title = "Logic gates based on electrically driven nanoelectromechanical switches",

abstract = "This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated.",

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note = "Publisher Copyright: {\textcopyright} 2018 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.",

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T1 - Logic gates based on electrically driven nanoelectromechanical switches

AU - Van Toan, Nguyen

AU - Zhao, Dong

AU - Inomata, Naoki

AU - Ono, Takahito

PY - 2019/2/1

Y1 - 2019/2/1

N2 - This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated.

AB - This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated.

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KW - NOR

KW - logic gates

KW - nanomechanical switches

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Logic gates based on electrically driven nanoelectromechanical switches

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