Low-pressure metalorganic chemical vapor deposition of a Cu Ga Se 2/Cu Al Se 2 heterostructure

Shigefusa Chichibu; Ryo Sudo; Nobuhide Yoshida; Yoshiyuki Harada; Mei Uchida; Satoru Matsumoto

doi:10.1143/JJAP.33.L286

Low-pressure metalorganic chemical vapor deposition of a Cu Ga Se ₂/Cu Al Se ₂ heterostructure

Shigefusa Chichibu, Ryo Sudo, Nobuhide Yoshida, Yoshiyuki Harada, Mei Uchida, Satoru Matsumoto

多元物質科学研究所・計測研究部門

Bentec Corporation

研究成果: ジャーナルへの寄稿 › 学術論文 › 査読

16 被引用数 (Scopus)

抄録

A single-heterostructure of CuGaSe₂/CuAlSe₂ chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe₂/CuAlSe₂ heterointerface was estimated to be 0.8±0.1 eV by means of X-ray photoelectron spectroscopy. The CuGaSe₂/CuAlSe₂ structure was found to have the straddling-type heterointerface, and the band discontinuity was found to be distributed mainly in the valence band.

本文言語	英語
ページ（範囲）	L286-L289
ジャーナル	Japanese Journal of Applied Physics
巻	33
号	3
DOI	https://doi.org/10.1143/JJAP.33.L286
出版ステータス	出版済み - 1994 3月

文献へのアクセス

10.1143/JJAP.33.L286

他のファイルとリンク

引用スタイル

@article{c5a5209be0164357b820bd38a6efcd7b,

title = "Low-pressure metalorganic chemical vapor deposition of a Cu Ga Se 2/Cu Al Se 2 heterostructure",

abstract = "A single-heterostructure of CuGaSe2/CuAlSe2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe2/CuAlSe2 heterointerface was estimated to be 0.8±0.1 eV by means of X-ray photoelectron spectroscopy. The CuGaSe2/CuAlSe2 structure was found to have the straddling-type heterointerface, and the band discontinuity was found to be distributed mainly in the valence band.",

author = "Shigefusa Chichibu and Ryo Sudo and Nobuhide Yoshida and Yoshiyuki Harada and Mei Uchida and Satoru Matsumoto",

year = "1994",

month = mar,

doi = "10.1143/JJAP.33.L286",

language = "English",

volume = "33",

pages = "L286--L289",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3",

}

TY - JOUR

T1 - Low-pressure metalorganic chemical vapor deposition of a Cu Ga Se 2/Cu Al Se 2 heterostructure

AU - Chichibu, Shigefusa

AU - Sudo, Ryo

AU - Yoshida, Nobuhide

AU - Harada, Yoshiyuki

AU - Uchida, Mei

AU - Matsumoto, Satoru

PY - 1994/3

Y1 - 1994/3

N2 - A single-heterostructure of CuGaSe2/CuAlSe2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe2/CuAlSe2 heterointerface was estimated to be 0.8±0.1 eV by means of X-ray photoelectron spectroscopy. The CuGaSe2/CuAlSe2 structure was found to have the straddling-type heterointerface, and the band discontinuity was found to be distributed mainly in the valence band.

AB - A single-heterostructure of CuGaSe2/CuAlSe2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe2/CuAlSe2 heterointerface was estimated to be 0.8±0.1 eV by means of X-ray photoelectron spectroscopy. The CuGaSe2/CuAlSe2 structure was found to have the straddling-type heterointerface, and the band discontinuity was found to be distributed mainly in the valence band.

UR - http://www.scopus.com/inward/record.url?scp=0028403123&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028403123&partnerID=8YFLogxK

U2 - 10.1143/JJAP.33.L286

DO - 10.1143/JJAP.33.L286

M3 - Article

AN - SCOPUS:0028403123

SN - 0021-4922

VL - 33

SP - L286-L289

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 3

ER -

Low-pressure metalorganic chemical vapor deposition of a Cu Ga Se 2/Cu Al Se 2 heterostructure

抄録

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル

Low-pressure metalorganic chemical vapor deposition of a Cu Ga Se ₂/Cu Al Se ₂ heterostructure