The dependence of the epitaxial growth of in-situ doped silicon films on the B2H6 and PH3 partial pressure deposited by low pressure chemical vapor deposition (LPCVD) in the temperature range between 600 and 750°C has been investigated for the two substrate orientations (100) and (111). The influence of the partial pressure of the dopant gases on the deposition rate and the resulting doping concentration has been studied. It is found that the doping concentration can be controlled in wide range of 1016 to 1020 cm-3. In the presence of B2H6 as well as PH3 the growth rate of silicon is reduced.
|ジャーナル||Journal of Crystal Growth|
|出版ステータス||Published - 1991 12月 2|
ASJC Scopus subject areas