Low-temperature epitaxial growth of in-situ doped silicon films

Roland Kircher; Makoto Furuno; Junichi Murota; Shoichi Ono

doi:10.1016/0022-0248(91)90782-Z

Low-temperature epitaxial growth of in-situ doped silicon films

Roland Kircher, Makoto Furuno, Junichi Murota, Shoichi Ono

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研究成果: Article › 査読

8 被引用数 (Scopus)

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The dependence of the epitaxial growth of in-situ doped silicon films on the B₂H₆ and PH₃ partial pressure deposited by low pressure chemical vapor deposition (LPCVD) in the temperature range between 600 and 750°C has been investigated for the two substrate orientations (100) and (111). The influence of the partial pressure of the dopant gases on the deposition rate and the resulting doping concentration has been studied. It is found that the doping concentration can be controlled in wide range of 10¹⁶ to 10²⁰ cm^-3. In the presence of B₂H₆ as well as PH₃ the growth rate of silicon is reduced.

本文言語	English
ページ（範囲）	439-442
ページ数	4
ジャーナル	Journal of Crystal Growth
巻	115
号	1-4
DOI	https://doi.org/10.1016/0022-0248(91)90782-Z
出版ステータス	Published - 1991 12月 2

ASJC Scopus subject areas

凝縮系物理学
無機化学
材料化学

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10.1016/0022-0248(91)90782-Z

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title = "Low-temperature epitaxial growth of in-situ doped silicon films",

abstract = "The dependence of the epitaxial growth of in-situ doped silicon films on the B2H6 and PH3 partial pressure deposited by low pressure chemical vapor deposition (LPCVD) in the temperature range between 600 and 750°C has been investigated for the two substrate orientations (100) and (111). The influence of the partial pressure of the dopant gases on the deposition rate and the resulting doping concentration has been studied. It is found that the doping concentration can be controlled in wide range of 1016 to 1020 cm-3. In the presence of B2H6 as well as PH3 the growth rate of silicon is reduced.",

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AU - Kircher, Roland

AU - Furuno, Makoto

AU - Murota, Junichi

AU - Ono, Shoichi

PY - 1991/12/2

Y1 - 1991/12/2

N2 - The dependence of the epitaxial growth of in-situ doped silicon films on the B2H6 and PH3 partial pressure deposited by low pressure chemical vapor deposition (LPCVD) in the temperature range between 600 and 750°C has been investigated for the two substrate orientations (100) and (111). The influence of the partial pressure of the dopant gases on the deposition rate and the resulting doping concentration has been studied. It is found that the doping concentration can be controlled in wide range of 1016 to 1020 cm-3. In the presence of B2H6 as well as PH3 the growth rate of silicon is reduced.

AB - The dependence of the epitaxial growth of in-situ doped silicon films on the B2H6 and PH3 partial pressure deposited by low pressure chemical vapor deposition (LPCVD) in the temperature range between 600 and 750°C has been investigated for the two substrate orientations (100) and (111). The influence of the partial pressure of the dopant gases on the deposition rate and the resulting doping concentration has been studied. It is found that the doping concentration can be controlled in wide range of 1016 to 1020 cm-3. In the presence of B2H6 as well as PH3 the growth rate of silicon is reduced.

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Low-temperature epitaxial growth of in-situ doped silicon films

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