Low-field mobility of two-dimensional electron gas (2DEG) in selectively doped pseudomorphic N-Al0.3Ga0.7As/ Ga 0.8In0.13As/GaAs structures was measured as a function of carrier concentration as well as a function of temperature. In order to explain the observed mobility characteristics, scattering due to clustering has been considered. It is shown that the low-field mobility of 2DEG at low temperature (<40 K) can be explained by the scattering due to clustering together with the remote ionized impurity scattering.
|ジャーナル||Applied Physics Letters|
|出版ステータス||Published - 1989|
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