Low Vt Ni-FUSI CMOS technology using a DyO cap layer with either single or dual Ni-phases

H. Y. Yu, S. Z. Chang, A. Veloso, A. Lauwers, C. Adelmann, B. Onsia, S. Van Elshocht, R. Singanamalla, M. Demand, R. Vos, T. Kauerauf, S. Brus, X. Shi, S. Kubicek, C. Vrancken, R. Mitsuhashi, P. Lehnen, J. Kittl, M. Niwa, K. M. YinT. Hoffmann, S. Degendt, M. Jurczak, P. Absil, S. Biesemans

研究成果: Conference article査読

16 被引用数 (Scopus)


This paper reports a novel approach to implement low Vt Ni-FUSI bulk CMOS by using a Dysprosium Oxide (DyO) cap layer on both HfSiON and SiON host dielectrics. We show for the first time that an ultra-thin DyO cap layer (5Å) can lower the NiSi FUSI nFET Vt by 300mV/500mV on HfSiON/SiON (resulting in a Vt.lin of 0.25V/0.18V respectively), w/o compromising the Tinv (<1Å variation), gate leakage, mobility or reliability. We observed that the DyO cap on SiON can convert into a DySiON silicate with similar electrical properties as HfSiON but much lower Vt, greatly-improved PBTI and 150x lower Jg wrt SiON. By demonstrating a novel DyO cap layer selective removal process, this work also points out the feasibility to realize low Vt CMOS using either dual phase (NiSi, Ni32Si12) or single phase (Ni2Si) FUSI gate for both n- and pFETs.

ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 2007 12月 1
イベント2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan
継続期間: 2007 6月 122007 6月 14

ASJC Scopus subject areas

  • 電子工学および電気工学


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