Magnetoresistance Effect through GaAs for Fe/MgO/GaAs/MgO/Fe Junctions

N. Tezuka, F. Mitsuhashi, S. Sugimoto

研究成果: ジャーナルへの寄稿学術論文査読

1 被引用数 (Scopus)

抄録

The magnetoresistance effect have been investigated for junctions consisting of Fe/MgO/n-GaAs/MgO/Fe. RHEED patterns and XRD pole profiles revealed that bottom electrodes, Fe, and inter layers, n-GaAs, grew epitaxially, while that upper electrodes, Fe, grew in a polycrystal form. The magnetoresistance curve correspond to the magnetization alignment between the lower and the upper Fe electrodes was obtained. The junctions exhibit maximum magnetoresistance ratio of 11.7% and 2.8% measured at 5 K and room temperature, respectively. The temperature and applied voltage dependence of resistance and magnetoresistance (MR) ratio were investigated. The MR ratio and resistance in parallel and antiparallel state for upper and lower Fe layer decreased with increasing temperature. It was found that with increasing voltage, MR ratio was maximum when the voltage was around several mV.

本文言語英語
論文番号012109
ジャーナルJournal of Physics: Conference Series
266
1
DOI
出版ステータス出版済み - 2011

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