TY - JOUR
T1 - Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga,Mn)As
AU - Akiba, N.
AU - Matsukura, F.
AU - Ohno, Y.
AU - Shen, A.
AU - Ohtani, K.
AU - Sakon, T.
AU - Motokawa, M.
AU - Ohno, H.
N1 - Funding Information:
This work was partially supported by a Grant-in-Aid for Scientific Research Priority Area `Spin Controlled Semiconductor Nanostructures' (Grant No. 09244103) from the Ministry of Education, Science, Sports and Culture, Japan, and by the `Research for the Future' Program (Grant No. JSPS-RFTF97P00202) from the Japan Society for the Promotion of Science.
PY - 1998/12/2
Y1 - 1998/12/2
N2 - Tunneling and magnetotunneling properties of GaAs-based p-type double barrier resonant tunneling diodes (RTD's) with a ferromagnetic (Ga,Mn)As emitter layer are studied. Current-voltage characteristics of RTD's revealed the presence of spontaneous magnetization in the (Ga,Mn)As emitter. The transverse magnetic field results suggest that the valence band dispersion of (Ga,Mn)As is different from GaAs.
AB - Tunneling and magnetotunneling properties of GaAs-based p-type double barrier resonant tunneling diodes (RTD's) with a ferromagnetic (Ga,Mn)As emitter layer are studied. Current-voltage characteristics of RTD's revealed the presence of spontaneous magnetization in the (Ga,Mn)As emitter. The transverse magnetic field results suggest that the valence band dispersion of (Ga,Mn)As is different from GaAs.
KW - (Ga,Mn)As
KW - Magnetic semiconductor
KW - Spin splitting
KW - Tunneling
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U2 - 10.1016/S0921-4526(98)00490-6
DO - 10.1016/S0921-4526(98)00490-6
M3 - Article
AN - SCOPUS:18544411016
SN - 0921-4526
VL - 256-258
SP - 561
EP - 564
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -