TY - JOUR
T1 - Mechanical properties and dislocation dynamics of III–V compound semiconductors
AU - Yonenaga, I.
AU - Sumino, K.
PY - 1992/6/16
Y1 - 1992/6/16
N2 - Mechanical properties of GaP, GaAs, InP, and InAs crystals are investigated by means of compressive deformation as a function of temperature and strain rate. The dynamic characteristics of dislocations are deduced from the analyses of strain rate cycling tests. The deformation of III–V compound semiconductors is controlled by dislocation processes which are essentially the same as those in elemental semiconductors such as Si, etc. The dislocation velocities which are the rate‐controlling parameters in the deformation of semiconductors are deduced as function of stress and temperature from experimental results.
AB - Mechanical properties of GaP, GaAs, InP, and InAs crystals are investigated by means of compressive deformation as a function of temperature and strain rate. The dynamic characteristics of dislocations are deduced from the analyses of strain rate cycling tests. The deformation of III–V compound semiconductors is controlled by dislocation processes which are essentially the same as those in elemental semiconductors such as Si, etc. The dislocation velocities which are the rate‐controlling parameters in the deformation of semiconductors are deduced as function of stress and temperature from experimental results.
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U2 - 10.1002/pssa.2211310236
DO - 10.1002/pssa.2211310236
M3 - Article
AN - SCOPUS:84990666074
SN - 0031-8965
VL - 131
SP - 663
EP - 670
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 2
ER -