Mesostructured HfO₂/Al₂O₃ Composite Thin Films with Reduced Leakage Current for Ion-Conducting Devices

Chemistry

• Ion 100%
• Liquid Film 100%
• Aluminum 80%
• Composite Material 60%
• Leakage Current 60%
• Meso Porosity 40%
• Procedure 40%
• Spin Coating 20%
• Coating Process 20%
• Voltage 20%
• Annealing 20%
• Ionic Conductivity 20%
• Diffusion 20%
• Reaction Yield 20%
• Electrode-Electrolyte Interface 20%
• Metal 20%
• Device 20%
• K+ 20%
• Electrolyte 20%
• Sputtering 20%

Material Science

• Thin Films 100%
• Al2O3 100%
• Liquid Films 100%
• Composite Material 60%
• Hafnium 40%
• Impedance 20%
• Sol-Gel 20%
• Air 20%
• Electrolyte 20%