Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

C. Watatani; K. Edamatsu; T. Itoh; H. Hayashi; S. Shimomura; S. Hiyamizu

Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

C. Watatani, K. Edamatsu, T. Itoh, H. Hayashi, S. Shimomura, S. Hiyamizu

電気通信研究所・情報通信基盤研究部門

Osaka University

研究成果: 会議への寄与 › 学会論文 › 査読

抄録

Recent development of micro-photoluminescence spectroscopy has enabled the authors to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. In this paper, the authors report on the micro-photoluminescence spectra of single GaAs/AlGaAs quantum dots grown on a (411)A surface of a GaAs substrate. They have also observed sharp luminescence lines originating not only from the lowest state of the confined exciton, but also from the excited states depending on the excitation power density.

本文言語	英語
ページ	57-58
ページ数	2
出版ステータス	出版済み - 2000
イベント	Quantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA 継続期間: 2000 5月 7 → 2000 5月 12

会議

会議	Quantum Electronics and Laser Science Conference (QELS 2000)
City	San Francisco, CA, USA
Period	00/5/7 → 00/5/12

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title = "Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface",

abstract = "Recent development of micro-photoluminescence spectroscopy has enabled the authors to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. In this paper, the authors report on the micro-photoluminescence spectra of single GaAs/AlGaAs quantum dots grown on a (411)A surface of a GaAs substrate. They have also observed sharp luminescence lines originating not only from the lowest state of the confined exciton, but also from the excited states depending on the excitation power density.",

author = "C. Watatani and K. Edamatsu and T. Itoh and H. Hayashi and S. Shimomura and S. Hiyamizu",

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T1 - Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

AU - Watatani, C.

AU - Edamatsu, K.

AU - Itoh, T.

AU - Hayashi, H.

AU - Shimomura, S.

AU - Hiyamizu, S.

PY - 2000

Y1 - 2000

N2 - Recent development of micro-photoluminescence spectroscopy has enabled the authors to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. In this paper, the authors report on the micro-photoluminescence spectra of single GaAs/AlGaAs quantum dots grown on a (411)A surface of a GaAs substrate. They have also observed sharp luminescence lines originating not only from the lowest state of the confined exciton, but also from the excited states depending on the excitation power density.

AB - Recent development of micro-photoluminescence spectroscopy has enabled the authors to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. In this paper, the authors report on the micro-photoluminescence spectra of single GaAs/AlGaAs quantum dots grown on a (411)A surface of a GaAs substrate. They have also observed sharp luminescence lines originating not only from the lowest state of the confined exciton, but also from the excited states depending on the excitation power density.

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T2 - Quantum Electronics and Laser Science Conference (QELS 2000)

Y2 - 7 May 2000 through 12 May 2000

ER -

Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

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