TY - JOUR
T1 - Molecular beam epitaxy of ErGaAs alloys on GaAs (0 0 1) substrates
AU - Jin, Ri Guo
AU - Yagi, Shuhei
AU - Hijikata, Yasuto
AU - Kuboya, Shigeyuki
AU - Onabe, Kentaro
AU - Katayama, Ryuji
AU - Yaguchi, Hiroyuki
PY - 2013
Y1 - 2013
N2 - We have successfully grown high crystalline quality ErGaAs alloy layers by solid-source molecular beam epitaxy. The X-ray diffraction (XRD) peak of ErGaAs alloys was found to shift systematically from the GaAs peak with increasing Er concentration up to 3.7%. XRD (1 1 5) reciprocal space map measurements revealed that the ErGaAs epitaxial layer is coherently grown on GaAs. We found from XRD results that ErGaAs alloys with low Er concentrations tend to crystallize in the zincblende structure.
AB - We have successfully grown high crystalline quality ErGaAs alloy layers by solid-source molecular beam epitaxy. The X-ray diffraction (XRD) peak of ErGaAs alloys was found to shift systematically from the GaAs peak with increasing Er concentration up to 3.7%. XRD (1 1 5) reciprocal space map measurements revealed that the ErGaAs epitaxial layer is coherently grown on GaAs. We found from XRD results that ErGaAs alloys with low Er concentrations tend to crystallize in the zincblende structure.
KW - Alloys
KW - Crystal structure
KW - High resolution X-ray diffraction
KW - Molecular beam epitaxy
KW - Semiconducting gallium arsenide
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U2 - 10.1016/j.jcrysgro.2012.12.043
DO - 10.1016/j.jcrysgro.2012.12.043
M3 - Article
AN - SCOPUS:84885427998
SN - 0022-0248
VL - 378
SP - 85
EP - 87
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -