Multiple-valued ferroelectric content-addressable memory

Ali Sheikholeslami; P. Glenn Gulak; Takahiro Hanyu

Multiple-valued ferroelectric content-addressable memory

Ali Sheikholeslami, P. Glenn Gulak, Takahiro Hanyu

研究成果: Conference article › 査読

抄録

A novel architecture for a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.

本文言語	English
ページ（範囲）	74-79
ページ数	6
ジャーナル	Proceedings of The International Symposium on Multiple-Valued Logic
出版ステータス	Published - 1996 1月 1
外部発表	はい
イベント	Proceedings of the 1996 26th International Symposium on Multiple-Valued Logic - Santiago de Compostela, Spain 継続期間: 1996 5月 29 → 1996 5月 31

ASJC Scopus subject areas

コンピュータサイエンス（全般）
数学 (全般)

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引用スタイル

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AB - A novel architecture for a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.

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Multiple-valued ferroelectric content-addressable memory

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ASJC Scopus subject areas

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