Muonium acceptor states in high GeSi1 - x Gex alloys

B. R. Carroll, R. L. Lichti, P. J.C. King, Y. G. Celebi, I. Yonenaga, K. H. Chow

研究成果: Article査読

9 被引用数 (Scopus)


Muon spin rotation and resonance studies of Czochralski-grown silicon germanium alloys with high Ge content have determined muonium (Mu) donor and acceptor energy levels. High-TF and RF μSR measurements on 90% and 84% Ge content SiGe alloys show Mu acceptor energy levels of 13.5 ± 5.2 and 77 ± 12 meV, respectively, as well as a split tetrahedral Mu hyperfine signal. In addition to observing two MuT states in these samples, we see in Si0.16 Ge0.84 a possible shallow acceptor signal in our transverse field data as a time-delayed process most likely arising from neutral Mu states. Our fits obtain a relaxing diamagnetic signal that shows bond-centered Mu ionization above 150 K and a shallow signal below roughly 50 K, split ± 80 kHz from diamagnetic Mu.

ジャーナルPhysica B: Condensed Matter
出版ステータスPublished - 2009 4月 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学


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