n-type high-conductive epitaxial diamond film prepared by gas source molecular beam epitaxy with methane and tri-n-butylphosphine

Engineering

• Source Gas 66%
• Substrates 66%
• Measurement 33%
• Activation Energy 33%
• Electrical Conductivity 33%
• Carrier Concentration 33%
• Conductive 33%
• Epitaxial Film 33%
• Rectification Ratio 33%
• Phosphorous (P) 33%
• Efficiency 33%
• Activation 33%
• High Conductivity 33%
• Shallower 33%

Physics

• Diamond Films 100%
• Molecular Beam Epitaxy 66%
• Methane 66%
• Substrates 66%
• Boron 33%

Material Science

• Diamond Films 100%
• Epitaxial Film 33%
• Carrier Concentration 33%
• Secondary Ion Mass Spectrometry 33%