TY - JOUR
T1 - Nanoengineering silicon materials by metal-assisted chemical etching for thermal energy harvesting
AU - Van Toan, Nguyen
AU - Tran, Ngoc Dang Khoa
AU - Kim Tuoi, Truong Thi
AU - Said, Suhana Mohd
AU - Mohd Sabri, Mohd Faizul
AU - Ono, Takahito
N1 - Publisher Copyright:
© 2025 Elsevier Ltd
PY - 2025/8/15
Y1 - 2025/8/15
N2 - Low-thermal heat waste energy harvesting represents a transformative technology for powering wireless sensing networks and electronic devices, particularly in remote and challenging environments. This review comprehensively examines the utilization of nanoporous silicon materials for thermal energy harvesting applications, focusing on their fabrication through metal-assisted chemical etching (MACE) and their unique properties that enhance energy conversion efficiency. The high surface area-to-volume ratio of nanoporous silicon significantly improves heat interaction and thermal-to-electrical energy conversion. We analyze the material properties and fabrication methods of nanoporous silicon, providing detailed evaluation of its performance in thermal energy harvesting applications. Experimental data demonstrates that nanoporous silicon achieves thermoelectric figures of merit (ZT) comparable to traditional materials while offering environmental and economic advantages. The review presents two innovative approaches for thermoelectric generators: solid-state configurations and ionic liquid implementations. Through systematic material evaluation and application demonstrations, we establish nanoporous silicon as an efficient and environmentally friendly solution for thermal energy harvesting. Our findings indicate that nanoporous silicon not only addresses the limitations of conventional thermoelectric materials but also provides a scalable and sustainable approach for enhancing energy harvesting system performance. This research contributes to advancing sustainable energy technologies and improving the viability of wireless sensing networks across various environmental conditions.
AB - Low-thermal heat waste energy harvesting represents a transformative technology for powering wireless sensing networks and electronic devices, particularly in remote and challenging environments. This review comprehensively examines the utilization of nanoporous silicon materials for thermal energy harvesting applications, focusing on their fabrication through metal-assisted chemical etching (MACE) and their unique properties that enhance energy conversion efficiency. The high surface area-to-volume ratio of nanoporous silicon significantly improves heat interaction and thermal-to-electrical energy conversion. We analyze the material properties and fabrication methods of nanoporous silicon, providing detailed evaluation of its performance in thermal energy harvesting applications. Experimental data demonstrates that nanoporous silicon achieves thermoelectric figures of merit (ZT) comparable to traditional materials while offering environmental and economic advantages. The review presents two innovative approaches for thermoelectric generators: solid-state configurations and ionic liquid implementations. Through systematic material evaluation and application demonstrations, we establish nanoporous silicon as an efficient and environmentally friendly solution for thermal energy harvesting. Our findings indicate that nanoporous silicon not only addresses the limitations of conventional thermoelectric materials but also provides a scalable and sustainable approach for enhancing energy harvesting system performance. This research contributes to advancing sustainable energy technologies and improving the viability of wireless sensing networks across various environmental conditions.
KW - Metal-assisted chemical etching
KW - Nanoporous silicon materials
KW - Thermal energy harvesting
KW - Wireless sensing networks
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U2 - 10.1016/j.mssp.2025.109622
DO - 10.1016/j.mssp.2025.109622
M3 - Review article
AN - SCOPUS:105003753612
SN - 1369-8001
VL - 195
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 109622
ER -