Nanoepitaxy of anatase-type TiO2 on CeO2 nanocubes self-assembled on a si substrate for fabricating well-aligned nanoscale heterogeneous interfaces

Daisuke Hojo, Takanari Togashi, Takeo Ohsawa, Mitsuhiro Saito, Zhongchang Wang, Yusuke Sakuda, Shunsuke Asahina, Yuichi Ikuhara, Taro Hitosugi, Tadafumi Adschiri

研究成果: ジャーナルへの寄稿学術論文査読

6 被引用数 (Scopus)

抄録

Nanoscale epitaxy or nanoepitaxy for fabricating macroscopically well-aligned nanoscale heterogeneous interfaces on a Si substrate is demonstrated, combining bottom-up and top-down processes efficiently. TiO 2 sputtered in vacuum was selectively nucleated on the atomically flat surfaces of individual CeO2 nanocubes prefabricated by self-assembly in solution on the substrate, and anatase-type TiO2 was grown after a heat treatment by solid-phase epitaxy to produce tandem nanocrystals with heterogeneous interfaces. The atomic configurations of the tandem nanocrystals fabricated after sputtering and subsequent annealing were determined using high-resolution scanning transmission electron microscopy to characterize the nanoscale heterogeneous interfaces. Sharp heterogeneous interfaces were observed between the anatase TiO2(001) and the CeO2(001) nanocubes, with the TiO2 [110] directions being parallel to the CeO2 [100] directions. This unique nanoepitaxial growth technique will contribute to the development of devices and catalytic materials incorporating functional tandem nanocrystals with nanoscale heterogeneous interfaces.

本文言語英語
ページ(範囲)4714-4720
ページ数7
ジャーナルCrystal Growth and Design
14
9
DOI
出版ステータス出版済み - 2014 9月 3

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