Naphthodithiophenediimide (NDTI)-based triads for high-performance air-stable, solution-processed ambipolar organic field-effect transistors

Jian Yong Hu; Masahiro Nakano; Itaru Osaka; Kazuo Takimiya

doi:10.1039/c5tc00486a

Naphthodithiophenediimide (NDTI)-based triads for high-performance air-stable, solution-processed ambipolar organic field-effect transistors

Jian Yong Hu, Masahiro Nakano, Itaru Osaka, Kazuo Takimiya

研究成果: Article › 査読

36 被引用数 (Scopus)

抄録

Two new NDTI-based triad-type ambipolar molecular semiconductors (NDTI-BBT and NDTI-BNT) were designed and synthesized. The triads can afford solution-processed OFETs with well-balanced, high hole and electron mobilities, up to 0.25 and 0.16 cm² V^-1 s^-1, respectively, which further leads to the successful demonstration of complementary-like inverters with high voltage gains of 281 and 254 in the first and third quadrants, respectively, under ambient conditions.

本文言語	English
ページ（範囲）	4244-4249
ページ数	6
ジャーナル	Journal of Materials Chemistry C
巻	3
号	17
DOI	https://doi.org/10.1039/c5tc00486a
出版ステータス	Published - 2015 5月 7
外部発表	はい

ASJC Scopus subject areas

化学 (全般)
材料化学

文献へのアクセス

10.1039/c5tc00486a

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引用スタイル

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