Near-room temperature synthesis of Zn2+-doped £-Ga2O3 nanoparticles via direct oxidation of ZnGa alloy by ultrasound

Toshiki Yamanaka, Yamato Hayashi, Hirotsugu Takizawa, Y. Hayashi

研究成果: ジャーナルへの寄稿学術論文査読

2 被引用数 (Scopus)

抄録

This study used ultrasound irradiation to fabricate Zn2+-doped £-Ga2O3 nanoparticles (NPs) from ZnGa alloy at near-room temperature (60 °C). The Zn2+-doped £-Ga2O3 NPs were obtained at 60 °C after two steps of ultrasound irradiation (miniaturization and oxidation of ZnGa alloy). The specific surface area of Zn2+-doped £-Ga2O3 NPs with a zinc content of 4 at.% was 90.4 m2/g. The oxidation behavior of ZnGa liquid alloy significantly differed from that of liquid Ga. X-ray photoelectron spectroscopy spectrum and lattice constant of Zn2+-doped £-Ga2O3 confirmed Zn2+-doping into the £-Ga2O3 crystal structure. By annealing at 900 °C, the obtained Zn2+-doped £-Ga2O3 did not transform to Zn2+-doped ¢-Ga2O3 but to the mixed phase of ¢-Ga2O3 and ZnGa2O4. The results indicate that Zn2+ cations, with larger ionic radii than Ga3+ cations, are more difficult to be introduced into the ¢-Ga2O3 crystal lattice. Thus, this ultrasound process can potentially synthesize various metal cations-doped £-Ga2O3 NPs without using high temperatures and pressures.

本文言語英語
ページ(範囲)100-105
ページ数6
ジャーナルJournal of the Ceramic Society of Japan
131
4
DOI
出版ステータス出版済み - 2023 4月 1

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