NO and NO2 gas sensors based on surface photovoltage system fabricated by self-ordered mesoporous silicate film

Hao Shen Zhou, Takeo Yamada, Keisuke Asai, Itaru Honma, Hidekazu Uchida, Teruaki Katsube

研究成果: 書籍の章/レポート/Proceedings査読

3 被引用数 (Scopus)

抄録

The first NO and NO2 gas sensors based on surface photo-voltage (SPV) semiconductor device system are fabricated by the metal/ SiO2 (self-ordered hexagonal mesoporous)- /Si3N4/SiO2/Si structure. Size controlled silicate hexagonal mesoporous film is successfully synthesized by spin coating on a Si3N4SiO2/Si silicon wafer using poly (ethylene oxide)-poly (propylene oxide)-poly (ethylene oxide) (Pluronic P123=EO20PO70EO20) triblock copolymers as a template. The characteristics of mesoporous film are investigated in XRD, TEM. The sensing properties of the self-ordered hexagonal mesoporous SPV system have been investigated by exposing to the NO or NO2 gas and air repeatedly. The changes of the average value and phase of the AC photocurrent (Iph) have been observed between the NO or NO2 gas and air. The response of the alternatively photocurrent is resulted from the physical adsorption and chemical interaction between detected NO or NO2 gas and the self-ordered hexagonal mesoporous film.

本文言語英語
ホスト出版物のタイトルStudies in Surface Science and Catalysis
ページ623-630
ページ数8
141
DOI
出版ステータス出版済み - 2002

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