The first NO and NO2 gas sensors based on surface photo-voltage (SPV) semiconductor device system are fabricated by the metal/ SiO2 (self-ordered hexagonal mesoporous)- /Si3N4/SiO2/Si structure. Size controlled silicate hexagonal mesoporous film is successfully synthesized by spin coating on a Si3N4SiO2/Si silicon wafer using poly (ethylene oxide)-poly (propylene oxide)-poly (ethylene oxide) (Pluronic P123=EO20PO70EO20) triblock copolymers as a template. The characteristics of mesoporous film are investigated in XRD, TEM. The sensing properties of the self-ordered hexagonal mesoporous SPV system have been investigated by exposing to the NO or NO2 gas and air repeatedly. The changes of the average value and phase of the AC photocurrent (Iph) have been observed between the NO or NO2 gas and air. The response of the alternatively photocurrent is resulted from the physical adsorption and chemical interaction between detected NO or NO2 gas and the self-ordered hexagonal mesoporous film.
|Studies in Surface Science and Catalysis
|出版済み - 2002