TY - JOUR
T1 - Non-equilibrium solid-phase growth of amorphous GeSn layer on Ge-on-insulator wafer induced by flash lamp annealing
AU - Oka, Hiroshi
AU - Mizubayashi, Wataru
AU - Ishikawa, Yuki
AU - Uchida, Noriyuki
AU - Mori, Takahiro
AU - Endo, Kazuhiko
N1 - Funding Information:
Acknowledgments This work was supported by JSPS KAKENHI, Grant Number 19K15035. We would like to thank Prof. Heiji Watanabe, Prof. Takayoshi Shimura, and Prof. Takuji Hosoi of Osaka University for their technical support and fruitful discussions throughout this research.
Publisher Copyright:
© 2021 The Japan Society of Applied Physics
PY - 2021/2
Y1 - 2021/2
N2 - The effect of flash lamp annealing on the crystal growth of amorphous germanium-tin (GeSn) layer deposited on Ge-on-insulator wafer was investigated. It was found that the presence of Sn in the amorphous Ge significantly promoted solid-phase growth (SPG). The diffusion of Sn during the SPG of GeSn was completely suppressed owing to milli-second thermal processing, providing a high-quality GeSn layer with Sn content of 13%, which far exceeds the equilibrium solid solubility limit (∼1%). The fabricated GeSn/Ge-on-insulator wafer exhibited improved infrared absorption beyond 2000 nm, which would be a suitable platform for near-infrared image sensors based on group-IV materials.
AB - The effect of flash lamp annealing on the crystal growth of amorphous germanium-tin (GeSn) layer deposited on Ge-on-insulator wafer was investigated. It was found that the presence of Sn in the amorphous Ge significantly promoted solid-phase growth (SPG). The diffusion of Sn during the SPG of GeSn was completely suppressed owing to milli-second thermal processing, providing a high-quality GeSn layer with Sn content of 13%, which far exceeds the equilibrium solid solubility limit (∼1%). The fabricated GeSn/Ge-on-insulator wafer exhibited improved infrared absorption beyond 2000 nm, which would be a suitable platform for near-infrared image sensors based on group-IV materials.
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U2 - 10.35848/1882-0786/abdac4
DO - 10.35848/1882-0786/abdac4
M3 - Article
AN - SCOPUS:85100371880
SN - 1882-0778
VL - 14
JO - Applied Physics Express
JF - Applied Physics Express
IS - 2
M1 - 025505
ER -