Nucleation and growth processes of silicon nanowires

Seiji Takeda, Nobuhiko Ozaki, Kohei Ueda, Hideo Kohno, Jun Kikkawa, Yutaka Ohno

研究成果: ジャーナルへの寄稿会議記事査読

1 被引用数 (Scopus)

抄録

We have studied the nucleation and growth processes of silicon nanowires (SiNWs) by means of transmission electron microscopy and scanning tunneling microscopy. SiNWs are grown on hydrogen-terminated Si surface via the VLS (Vapor-Liquid-Solid) mechanism using silane (SiH4) as source gas. We have classified the growth process of SiNWs into three stages: the formation of nanocatalysts on a substrate, the nucleation of SiNWs in nanocatalysts, followed by the growth of SiNWs. We have shown that the structures of SiNWs are varied in several ways in each stage, and accordingly the structural properties of grown SiNWs can be modified to great extents. At the present moment, the phenomena at the each stage are not fully controlled, and this prevents us utilizing silicon nanowires more effectively.

本文言語英語
論文番号F9.1
ページ(範囲)257-267
ページ数11
ジャーナルMaterials Research Society Symposium Proceedings
832
出版ステータス出版済み - 2005
イベント2004 MRS Fall Meeting - Boston, MA, 米国
継続期間: 2004 11月 292004 12月 1

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