Observation of rebirth of metallic paths during resistance switching of metal nanowire

K. Horiba, K. Fujiwara, N. Nagamura, S. Toyoda, H. Kumigashira, M. Oshima, H. Takagi

研究成果: ジャーナルへの寄稿学術論文査読

10 被引用数 (Scopus)

抄録

To clarify the mechanism of resistance-switching phenomena, we have investigated the change in the electronic structure of a Ni nanowire device during resistance-switching operations using scanning photoelectron microscopy techniques. We directly observed the disappearance of density of state (DOS) at the Fermi level (EF) in a high-resistance state and recovery of a finite DOS at EF in a low-resistance state. These results are direct evidence that the Ni nanowire is fully oxidized after switching to the high-resistance state and that Ni-metal conductive paths in the oxidized nanowire are recovered in the low-resistance state.

本文言語英語
論文番号193114
ジャーナルApplied Physics Letters
103
19
DOI
出版ステータス出版済み - 2013 11月 4

フィンガープリント

「Observation of rebirth of metallic paths during resistance switching of metal nanowire」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル