Observation of the Si(111)7 × 7 atomic structure using non-contact scanning nonlinear dielectric microscopy

Ryusuke Hirose, Koya Ohara, Yasuo Cho

研究成果: ジャーナルへの寄稿学術論文査読

25 被引用数 (Scopus)

抄録

Non-contact scanning nonlinear dielectric microscopy (NC-SNDM) operated under ultra high vacuum (UHV) conditions was developed. This microscopy enables the simultaneous measurement of the topography and dielectric properties of a specimen. For electrically conductive materials, the tunnelling current is also measurable. The atomic structure of Si(111)7 × 7 was successfully resolved using this new SNDM technique. This is the first report on the achievement of atomic resolution in capacitance measurements.

本文言語英語
論文番号084014
ジャーナルNanotechnology
18
8
DOI
出版ステータス出版済み - 2007 2月 28

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