TY - JOUR
T1 - Optimization of the design of a crucible for a SiC sublimation growth system using a global model
AU - Chen, X. J.
AU - Liu, L. J.
AU - Tezuka, H.
AU - Usuki, Y.
AU - Kakimoto, K.
PY - 2008/4
Y1 - 2008/4
N2 - Induction heating, temperature field and growth rate for a sublimation growth system of silicon carbide were calculated by using a global simulation model. The effects of shape of the crucible on temperature distribution and growth rate were investigated. It was found that thickness of the substrate holder, distance between the powder and substrate, and angle between the crucible wall and powder free surface are important for growth rate and crystal quality. Finally, a curved powder free surface was also studied. The results indicate that the use of a curved powder free surface is also an effective method for obtaining a higher growth rate.
AB - Induction heating, temperature field and growth rate for a sublimation growth system of silicon carbide were calculated by using a global simulation model. The effects of shape of the crucible on temperature distribution and growth rate were investigated. It was found that thickness of the substrate holder, distance between the powder and substrate, and angle between the crucible wall and powder free surface are important for growth rate and crystal quality. Finally, a curved powder free surface was also studied. The results indicate that the use of a curved powder free surface is also an effective method for obtaining a higher growth rate.
KW - A1. Computer simulation
KW - A1. Heat transfer
KW - A1. Substrates
KW - A2. Growth from vapor
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U2 - 10.1016/j.jcrysgro.2007.11.016
DO - 10.1016/j.jcrysgro.2007.11.016
M3 - Article
AN - SCOPUS:41449117934
SN - 0022-0248
VL - 310
SP - 1810
EP - 1814
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 7-9
ER -