TY - JOUR
T1 - Optimum exploration for the self-ordering of anodic porous alumina formed via selenic acid anodizing
AU - Akiya, Shunta
AU - Kikuchi, Tatsuya
AU - Natsui, Shungo
AU - Suzuki, Ryosuke O.
N1 - Publisher Copyright:
© The Author(s) 2015.
PY - 2015
Y1 - 2015
N2 - Improvements of the regularity of the arrangement of anodic porous alumina formed by selenic acid anodizing were investigated under various operating conditions. The oxide burning voltage increased with the stirring rate of the selenic acid solution, and the high applied voltage without oxide burning was achieved by vigorously stirring the solution. The regularity of the porous alumina was improved as the anodizing time and surface flatness increased. Conversely, the purity of the 99.5-99.9999 wt% aluminum specimens without second phases of metals and metallic compounds was not affected by the regularity of the porous alumina formed by selenic acid anodizing. The porous alumina was also self-ordered on/around a defect, such as a grain boundary, under self-ordering high voltage anodizing conditions. A highly ordered cell arrangement measuring 111 nm in diameter was successfully fabricated over the whole aluminum surface by selenic acid anodizing using a 99.999 wt% aluminum plate at 273 K and 46 V for 24 h under vigorous stirring conditions.
AB - Improvements of the regularity of the arrangement of anodic porous alumina formed by selenic acid anodizing were investigated under various operating conditions. The oxide burning voltage increased with the stirring rate of the selenic acid solution, and the high applied voltage without oxide burning was achieved by vigorously stirring the solution. The regularity of the porous alumina was improved as the anodizing time and surface flatness increased. Conversely, the purity of the 99.5-99.9999 wt% aluminum specimens without second phases of metals and metallic compounds was not affected by the regularity of the porous alumina formed by selenic acid anodizing. The porous alumina was also self-ordered on/around a defect, such as a grain boundary, under self-ordering high voltage anodizing conditions. A highly ordered cell arrangement measuring 111 nm in diameter was successfully fabricated over the whole aluminum surface by selenic acid anodizing using a 99.999 wt% aluminum plate at 273 K and 46 V for 24 h under vigorous stirring conditions.
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U2 - 10.1149/2.0391510jes
DO - 10.1149/2.0391510jes
M3 - Article
AN - SCOPUS:84940206743
SN - 0013-4651
VL - 162
SP - E244-E250
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 10
ER -