Optoelectronic application of multi-layer epitaxial graphene on a Si substrate

Roman Olac-vaw, H. C. Kang, T. Komori, T. Watanabe, H. Karasawa, Y. Miyamoto, H. Handa, H. Fukidome, T. Suemitsu, M. Suemitsu, V. Mitin, T. Otsuji

研究成果: 書籍の章/レポート/Proceedings会議への寄与査読

2 被引用数 (Scopus)

抄録

In this work, the epitaxial graphene channel formed on 3C-SiC grown on a Si substrate backgate transistor was designed, fabricated and characterized for electronic and optoelectronic applications. Even though a significant amount of the gate leakage current is observed, the experimental results show the device works as an n-type transistor as well as an infrared photovoltaic transistor with the backgate modulation. The observation of the ambipolar behavior verifies the unique property of the graphene layers. The epitaxial graphene is believed to be unintentionally p-type with the Fermi level offset around +0.11∼+0.12 V at the Dirac point. The drain saturated current of the graphene channel transistors is on the order of mA/mm. The photo-generated current can be achieved up to almost 20nA, corresponding to 0.06 mA/W in photo-responsivity at 0.5-V drain-source bias voltage and 0.5-V gate voltage. The backgate voltage tuning spectral characteristic is also demonstrated. The graphene based transistors have a potential application in infrared detection.

本文言語英語
ホスト出版物のタイトルINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
ページ224-225
ページ数2
DOI
出版ステータス出版済み - 2010
イベント2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, 中国
継続期間: 2010 1月 32010 1月 8

出版物シリーズ

名前INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

会議

会議2010 3rd International Nanoelectronics Conference, INEC 2010
国/地域中国
CityHongkong
Period10/1/310/1/8

フィンガープリント

「Optoelectronic application of multi-layer epitaxial graphene on a Si substrate」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル