抄録
Overvoltage self-protection with a slight temperature dependence on triggering temperature was realized for a light-triggered thyristor. This thyristor had a narrow, low concentration player in the light-triggered region. This low concentration area was formed by ion implantation. The thyristor was triggered when the depletion layer extended to near the n-emitter. The triggering voltage could be controlled by the ion implantation dose.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 789-793 |
| ページ数 | 5 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | 48 |
| 号 | 4 |
| DOI | |
| 出版ステータス | Published - 2001 4月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学