Overvoltage self-protection with a slight temperature dependence on triggering temperature was realized for a light-triggered thyristor. This thyristor had a narrow, low concentration player in the light-triggered region. This low concentration area was formed by ion implantation. The thyristor was triggered when the depletion layer extended to near the n-emitter. The triggering voltage could be controlled by the ion implantation dose.
|ジャーナル||IEEE Transactions on Electron Devices|
|出版ステータス||Published - 2001 4月|
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