TY - JOUR
T1 - Oxide field-effect transistor with polymer-based gate insulator
AU - Fujiwara, Kohei
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Development of field-effect transistors (FETs) using functional oxide films is currently an area of active research. To effectively modulate electrical conduction properties, the formation of oxide channel/gate insulator interface is critical. In this technical note, a gate insulator fabrication technique based on a poly(para-xylylene) coating method, some examples of FETs on new oxide materials, and potential applications to flexible oxide FETs are described.
AB - Development of field-effect transistors (FETs) using functional oxide films is currently an area of active research. To effectively modulate electrical conduction properties, the formation of oxide channel/gate insulator interface is critical. In this technical note, a gate insulator fabrication technique based on a poly(para-xylylene) coating method, some examples of FETs on new oxide materials, and potential applications to flexible oxide FETs are described.
KW - Electrostatic carrier accumulation
KW - Field effect
KW - Field-effect transistors
KW - Functional oxides
KW - Gate insulator
UR - http://www.scopus.com/inward/record.url?scp=85062401779&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85062401779&partnerID=8YFLogxK
U2 - 10.1541/ieejeiss.139.207
DO - 10.1541/ieejeiss.139.207
M3 - Article
AN - SCOPUS:85062401779
SN - 0385-4221
VL - 139
SP - 207
EP - 210
JO - IEEJ Transactions on Electronics, Information and Systems
JF - IEEJ Transactions on Electronics, Information and Systems
IS - 3
ER -