Oxygen doped Ge crystals Czochralski-grown from the B2O 3-fully-covered melt

Toshinori Taishi; Hideaki Ise; Yu Murao; Takayuki Ohsawa; Yuki Tokumoto; Yutaka Ohno; Ichiro Yonenaga

doi:10.1016/j.mee.2010.10.015

Oxygen doped Ge crystals Czochralski-grown from the B₂O ₃-fully-covered melt

Toshinori Taishi, Hideaki Ise, Yu Murao, Takayuki Ohsawa, Yuki Tokumoto, Yutaka Ohno, Ichiro Yonenaga

金属材料研究所 (研究所レベル所属のみ)

研究成果: ジャーナルへの寄稿 › 学術論文 › 査読

2 被引用数 (Scopus)

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Local vibrations of oxygen in Ge crystals grown from a melt fully covered by B₂O₃ were evaluated by Fourier-transform infrared spectroscopy. Ge single crystals containing oxygen were grown by the Czochralski method under various growth conditions. Oxygen concentrations in the crystals were determined to be in the range between 8.5 × 10¹⁵ and 5.5 × 10¹⁷ cm^-3 from the infrared absorption at 855 cm^-1 originating in local vibration of Ge-O_i-Ge quasi-molecules. Absorption peaks relating to GeO_x, SiO_x and Si-O_i-Si were not detected in the as-grown crystals. The calibration coefficient for determining oxygen concentration in Ge crystals from the absorption peak intensity at 1264 cm^-1 was estimated to be 1.15 × 10¹⁹ cm^-2.

本文言語	英語
ページ（範囲）	496-498
ページ数	3
ジャーナル	Microelectronic Engineering
巻	88
号	4
DOI	https://doi.org/10.1016/j.mee.2010.10.015
出版ステータス	出版済み - 2011 4月

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10.1016/j.mee.2010.10.015

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@article{2b3a6cce1402452990e2935004920f1f,

title = "Oxygen doped Ge crystals Czochralski-grown from the B2O 3-fully-covered melt",

abstract = "Local vibrations of oxygen in Ge crystals grown from a melt fully covered by B2O3 were evaluated by Fourier-transform infrared spectroscopy. Ge single crystals containing oxygen were grown by the Czochralski method under various growth conditions. Oxygen concentrations in the crystals were determined to be in the range between 8.5 × 1015 and 5.5 × 1017 cm-3 from the infrared absorption at 855 cm-1 originating in local vibration of Ge-Oi-Ge quasi-molecules. Absorption peaks relating to GeOx, SiOx and Si-Oi-Si were not detected in the as-grown crystals. The calibration coefficient for determining oxygen concentration in Ge crystals from the absorption peak intensity at 1264 cm-1 was estimated to be 1.15 × 1019 cm-2.",

keywords = "Concentration, Crystal growth, Germanium, Infrared spectra, Oxygen",

author = "Toshinori Taishi and Hideaki Ise and Yu Murao and Takayuki Ohsawa and Yuki Tokumoto and Yutaka Ohno and Ichiro Yonenaga",

note = "Funding Information: This work was supported in part by a Grant-in-Aid for Science Research ( 20760003 ) from the Ministry of Education, Science, Sports and Culture . This work was also performed under the Inter-university Cooperative Research Program of the Institute for Materials Research, Tohoku University.",

year = "2011",

month = apr,

doi = "10.1016/j.mee.2010.10.015",

language = "English",

volume = "88",

pages = "496--498",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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T1 - Oxygen doped Ge crystals Czochralski-grown from the B2O 3-fully-covered melt

AU - Taishi, Toshinori

AU - Ise, Hideaki

AU - Murao, Yu

AU - Ohsawa, Takayuki

AU - Tokumoto, Yuki

AU - Ohno, Yutaka

AU - Yonenaga, Ichiro

N1 - Funding Information: This work was supported in part by a Grant-in-Aid for Science Research ( 20760003 ) from the Ministry of Education, Science, Sports and Culture . This work was also performed under the Inter-university Cooperative Research Program of the Institute for Materials Research, Tohoku University.

PY - 2011/4

Y1 - 2011/4

N2 - Local vibrations of oxygen in Ge crystals grown from a melt fully covered by B2O3 were evaluated by Fourier-transform infrared spectroscopy. Ge single crystals containing oxygen were grown by the Czochralski method under various growth conditions. Oxygen concentrations in the crystals were determined to be in the range between 8.5 × 1015 and 5.5 × 1017 cm-3 from the infrared absorption at 855 cm-1 originating in local vibration of Ge-Oi-Ge quasi-molecules. Absorption peaks relating to GeOx, SiOx and Si-Oi-Si were not detected in the as-grown crystals. The calibration coefficient for determining oxygen concentration in Ge crystals from the absorption peak intensity at 1264 cm-1 was estimated to be 1.15 × 1019 cm-2.

AB - Local vibrations of oxygen in Ge crystals grown from a melt fully covered by B2O3 were evaluated by Fourier-transform infrared spectroscopy. Ge single crystals containing oxygen were grown by the Czochralski method under various growth conditions. Oxygen concentrations in the crystals were determined to be in the range between 8.5 × 1015 and 5.5 × 1017 cm-3 from the infrared absorption at 855 cm-1 originating in local vibration of Ge-Oi-Ge quasi-molecules. Absorption peaks relating to GeOx, SiOx and Si-Oi-Si were not detected in the as-grown crystals. The calibration coefficient for determining oxygen concentration in Ge crystals from the absorption peak intensity at 1264 cm-1 was estimated to be 1.15 × 1019 cm-2.

KW - Concentration

KW - Crystal growth

KW - Germanium

KW - Infrared spectra

KW - Oxygen

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U2 - 10.1016/j.mee.2010.10.015

DO - 10.1016/j.mee.2010.10.015

M3 - Article

AN - SCOPUS:79751538996

SN - 0167-9317

VL - 88

SP - 496

EP - 498

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4

ER -

Oxygen doped Ge crystals Czochralski-grown from the B2O 3-fully-covered melt

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Oxygen doped Ge crystals Czochralski-grown from the B₂O ₃-fully-covered melt