TY - JOUR
T1 - Oxygen-isotope-doped silicon crystals grown by a floating zone method
AU - Kakimoto, Koichi
AU - Tanahashi, Katsuto
AU - Yamada-Kaneta, Hiroshi
AU - Nagasawa, Tohru
N1 - Funding Information:
This work was partly supported by a Grant-in Aid for Scientific Research (B) 14350010 and Grant-in-Aid for the creation of innovation through business-academy-public sector cooperation from the Japanese Ministry of Education, Science, Sports and Culture.
PY - 2007/6/15
Y1 - 2007/6/15
N2 - We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crystal growth. The isotope of 18O was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of 18O from the gas phase through a liquid-gas interface.
AB - We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crystal growth. The isotope of 18O was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of 18O from the gas phase through a liquid-gas interface.
KW - A1. Floating zone
KW - A2. Single crystal growth
KW - B1. Isotope oxygen
KW - B2. Semiconductor silicon
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U2 - 10.1016/j.jcrysgro.2007.03.015
DO - 10.1016/j.jcrysgro.2007.03.015
M3 - Article
AN - SCOPUS:34248525168
SN - 0022-0248
VL - 304
SP - 310
EP - 312
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2
ER -