Oxygen-isotope-doped silicon crystals grown by a floating zone method

Koichi Kakimoto, Katsuto Tanahashi, Hiroshi Yamada-Kaneta, Tohru Nagasawa

研究成果: ジャーナルへの寄稿学術論文査読

抄録

We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crystal growth. The isotope of 18O was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of 18O from the gas phase through a liquid-gas interface.

本文言語英語
ページ(範囲)310-312
ページ数3
ジャーナルJournal of Crystal Growth
304
2
DOI
出版ステータス出版済み - 2007 6月 15

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