TY - JOUR
T1 - Perpendicular Magnetic Tunnel Junctions with Low Resistance-Area Product
T2 - High Output Voltage and Bias Dependence of Magnetoresistance
AU - Tezuka, N.
AU - Oikawa, S.
AU - Abe, I.
AU - Matsuura, M.
AU - Sugimoto, S.
AU - Nishimura, K.
AU - Seino, T.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016
Y1 - 2016
N2 - We investigate the tunnel magnetoresistance (TMR) effect and its applied bias voltage dependence for perpendicular magnetic tunnel junctions (p-MTJs) with low resistance-area (RA) products of about 10 Ω μm2. We obtain a maximum TMR ratio of 248% among the examined devices. The bias-voltage dependence of the TMR ratio for these junctions is almost the same as that for junctions with RA products of about 10-1000 Ω μ m2 in the positive voltage region, while a fast drop in the TMR ratio is observed in the negative bias region. An output voltage of more than 200 mV is obtained for these p-MTJs.
AB - We investigate the tunnel magnetoresistance (TMR) effect and its applied bias voltage dependence for perpendicular magnetic tunnel junctions (p-MTJs) with low resistance-area (RA) products of about 10 Ω μm2. We obtain a maximum TMR ratio of 248% among the examined devices. The bias-voltage dependence of the TMR ratio for these junctions is almost the same as that for junctions with RA products of about 10-1000 Ω μ m2 in the positive voltage region, while a fast drop in the TMR ratio is observed in the negative bias region. An output voltage of more than 200 mV is obtained for these p-MTJs.
KW - magnetic random access memory
KW - magnetic tunnel junctions
KW - magnetoresistive devices
KW - Spin electronics
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U2 - 10.1109/LMAG.2016.2584582
DO - 10.1109/LMAG.2016.2584582
M3 - Article
AN - SCOPUS:84983087687
SN - 1949-307X
VL - 7
JO - IEEE Magnetics Letters
JF - IEEE Magnetics Letters
M1 - 7498675
ER -