Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH 3) 3Ga/AsH 3

Yutaka Oyama; Fumio Matsumoto; Hiroshi Watanabe; Ken Suto; Jun Ichi Nishizawa

doi:10.1149/1.1397320

Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH ₃) ₃Ga/AsH ₃

Yutaka Oyama, Fumio Matsumoto, Hiroshi Watanabe, Ken Suto, Jun Ichi Nishizawa

工学研究科・知能デバイス材料学専攻

研究成果: Article › 査読

抄録

The persistent photoconductivity (PPC) of undoped low temperature (LT) grown GaAs has been investigated by temperature-dependent resistance measurements. The PPC phenomenon has been observed under atmospheric pressure in uniformly doped n-GaAs for the first time. It is shown that the recovery temperature is 230 K, and four distinct peaks appear in the PPC spectrum. From the results of secondary ion mass spectroscopy and X-ray multicrystal diffractometry analysis, it is considered that the LT-GaAs layers contain arsenic precipitates or related defects, and that the PPC phenomenon is associated with excess arsenic-related defects in the layers.

本文言語	English
ページ（範囲）	G559-G562
ジャーナル	Journal of the Electrochemical Society
巻	148
号	10
DOI	https://doi.org/10.1149/1.1397320
出版ステータス	Published - 2001 10月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
再生可能エネルギー、持続可能性、環境
表面、皮膜および薄膜
電気化学
材料化学

UN SDG

この成果は、次の持続可能な開発目標に貢献しています

文献へのアクセス

10.1149/1.1397320

他のファイルとリンク

フィンガープリント

「Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH ₃) ₃Ga/AsH ₃」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{cfbdc96bc23f48cfa1b1cada51c4876b,

title = "Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH 3) 3Ga/AsH 3 ",

abstract = "The persistent photoconductivity (PPC) of undoped low temperature (LT) grown GaAs has been investigated by temperature-dependent resistance measurements. The PPC phenomenon has been observed under atmospheric pressure in uniformly doped n-GaAs for the first time. It is shown that the recovery temperature is 230 K, and four distinct peaks appear in the PPC spectrum. From the results of secondary ion mass spectroscopy and X-ray multicrystal diffractometry analysis, it is considered that the LT-GaAs layers contain arsenic precipitates or related defects, and that the PPC phenomenon is associated with excess arsenic-related defects in the layers.",

author = "Yutaka Oyama and Fumio Matsumoto and Hiroshi Watanabe and Ken Suto and Nishizawa, {Jun Ichi}",

year = "2001",

month = oct,

doi = "10.1149/1.1397320",

language = "English",

volume = "148",

pages = "G559--G562",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "10",

}

TY - JOUR

T1 - Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH 3) 3Ga/AsH 3

AU - Oyama, Yutaka

AU - Matsumoto, Fumio

AU - Watanabe, Hiroshi

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2001/10

Y1 - 2001/10

N2 - The persistent photoconductivity (PPC) of undoped low temperature (LT) grown GaAs has been investigated by temperature-dependent resistance measurements. The PPC phenomenon has been observed under atmospheric pressure in uniformly doped n-GaAs for the first time. It is shown that the recovery temperature is 230 K, and four distinct peaks appear in the PPC spectrum. From the results of secondary ion mass spectroscopy and X-ray multicrystal diffractometry analysis, it is considered that the LT-GaAs layers contain arsenic precipitates or related defects, and that the PPC phenomenon is associated with excess arsenic-related defects in the layers.

AB - The persistent photoconductivity (PPC) of undoped low temperature (LT) grown GaAs has been investigated by temperature-dependent resistance measurements. The PPC phenomenon has been observed under atmospheric pressure in uniformly doped n-GaAs for the first time. It is shown that the recovery temperature is 230 K, and four distinct peaks appear in the PPC spectrum. From the results of secondary ion mass spectroscopy and X-ray multicrystal diffractometry analysis, it is considered that the LT-GaAs layers contain arsenic precipitates or related defects, and that the PPC phenomenon is associated with excess arsenic-related defects in the layers.

UR - http://www.scopus.com/inward/record.url?scp=0442292384&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0442292384&partnerID=8YFLogxK

U2 - 10.1149/1.1397320

DO - 10.1149/1.1397320

M3 - Article

AN - SCOPUS:0442292384

SN - 0013-4651

VL - 148

SP - G559-G562

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 10

ER -