Phase transformation and capacitance enhancement of anodic zr O2 -Si O2

S. Koyama, Y. Aoki, N. Sakaguchi, S. Nagata, H. Habazaki

研究成果: Article査読

5 被引用数 (Scopus)


Capacitance enhancement of anodic oxide films on zirconium by adding silicon is reported here with correlation to the phase transformation of the oxide. The anodic oxide film formed on zirconium consists mainly of monoclinic Zr O2, which changes to tetragonal Zr O2 phase on the Zr- 5.5 atom % Si. Further increase in the silicon contents to 10 and 16 atom % results in the formation of amorphous oxide up to 30 V, above which two-layered films, comprising an outer crystalline tetragonal-phase oxide layer and an inner amorphous layer, are developed. The relative thickness of the outer crystalline layer to the total film thickness increases with formation voltage. The highest capacitance of the anodic oxide films is obtained on the Zr- 10 atom % Si. The changes in capacitance, permittivity and formation ratio of anodic oxide films with alloy composition are discussed with phase transformation and growth process of anodic oxides.

ジャーナルJournal of the Electrochemical Society
出版ステータスPublished - 2010

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学


「Phase transformation and capacitance enhancement of anodic zr O2 -Si O2」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。