Phonon self-energy corrections to nonzero wave-vector phonon modes in single-layer graphene

P. T. Araujo, D. L. Mafra, K. Sato, R. Saito, J. Kong, M. S. Dresselhaus

研究成果: Article査読

34 被引用数 (Scopus)


Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q=0) wave vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene originating from a double-resonant Raman process with q 0. The observed phonon renormalization effects are different from what is observed for the zone-center q=0 case. To explain our experimental findings, we explored the phonon self-energy for the phonons with nonzero wave vectors (q 0) in single-layer graphene in which the frequencies and decay widths are expected to behave oppositely to the behavior observed in the corresponding zone-center q=0 processes. Within this framework, we resolve the identification of the phonon modes contributing to the G Raman feature at 2450cm -1 to include the iTO+LA combination modes with q 0 and also the 2iTO overtone modes with q=0, showing both to be associated with wave vectors near the high symmetry point K in the Brillouin zone.

ジャーナルPhysical review letters
出版ステータスPublished - 2012 7月 24

ASJC Scopus subject areas

  • 物理学および天文学(全般)


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