@inproceedings{18e366cda39b434b8200b92f769d9692,
title = "Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light",
abstract = "In this work, n+pn-type photodiodes with various surface n + layer profiles formed on the atomically flat Si surface were evaluated to investigate the relationships between the surface photo-generated carrier drift layer dopant profiles with a high uniformity and sensitivity and stability to UV-light. The degradation mechanism of photodiode sensitivitiy in UVlight wavelength due to UV-light exposure is explained by the changes in the fixed charges and the interface states at Si/SiO2 system above photodiode. Finally, a design strategy of photodiode dopant profile to achieve a high sensitivity and a high stability to UV-light is proposed.",
keywords = "Atomically flat Si surface, Photodiode, UV-light",
author = "Taiki Nakazawa and Rihito Kuroda and Yasumasa Koda and Shigetoshi Sugawa",
year = "2012",
doi = "10.1117/12.907727",
language = "English",
isbn = "9780819489456",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Proceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII",
note = "Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII ; Conference date: 25-01-2012 Through 26-01-2012",
}