Physical origins of ON-OFF switching in ReRAM via V_O based conducting channels

Physics

• Switching 100%
• Electric Potential 50%
• Oxide 50%
• First-Principles 50%
• Orbitals 50%
• Defects 50%
• Calculation 50%
• Injection 50%
• Cohesion 50%

Engineering

• Switching 100%
• Electric Potential 50%
• Oxygen Vacancy 50%
• Driving Force 50%
• Fermi Level 50%
• Mechanisms 50%
• Defects 50%