Preparation and dielectric and electrooptic properties of bi4ti3o12 films by electron cyclotron resonance plasma sputtering deposition

Yoichiro Masuda, Akira Baba, Hiroshi Masumoto, Takashi Goto, Makoto Minakata, Toshio Hirai

研究成果: ジャーナルへの寄稿学術論文査読

22 被引用数 (Scopus)

抄録

Poly crystalline and epitaxial films of a layer-structured ferroelectric Bi4Ti3O12 in perovskite phases have been deposited on sapphire substrates by ECR plasma sputtering using a sintering ceramic target. The substrate temperature higher than 550°C is necessary to grow Bi4Ti3O12 films in the perovskite phase without post-thermal annealing. Bi4Ti3012 films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. Refractive indices of Bi4Ti3O12 films were determined from measurements of the Brewster angle, and the dielectric constant was measured at 1 kHz using an ADEX-221A LCR meter.

本文言語英語
ページ(範囲)2212-2215
ページ数4
ジャーナルJapanese Journal of Applied Physics
30
9S
DOI
出版ステータス出版済み - 1991 9月

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