TY - JOUR
T1 - Preparation of Al-O-N films by electron cyclotron resonance plasma-assisted chemical vapor deposition
AU - Goto, Takashi
AU - Zhang, Wei
AU - Hirai, Toshio
PY - 1999/6
Y1 - 1999/6
N2 - Al-O-N films were prepared by electron cyclotron resonance plasma-assisted chemical vapor deposition (ECR PACVD) using an AlBr3-N2O-N2-Ar-H2 gas system. The structure, composition, deposition rate and optical properties were investigated. The compositions were controlled by changing the N2O/(N2O+N2) flow rate ratio (R). The refractive index was varied from 1.60 to 2.10, and the cutoff photon energy at 10% transmittance (Eg/10) from 5.1 to 7.0 eV as the R changed from 0 to 1.0. The Al-O-N films were composed mainly of a mixture of Al2O3 and AlN. An aluminum oxynitride phase was also identified at R = 0.2 to 0.53. The Al-O-N films contained a (001)-oriented hexagonal AlN phase at R = 0.025, and the films were amorphous at R>0.05.
AB - Al-O-N films were prepared by electron cyclotron resonance plasma-assisted chemical vapor deposition (ECR PACVD) using an AlBr3-N2O-N2-Ar-H2 gas system. The structure, composition, deposition rate and optical properties were investigated. The compositions were controlled by changing the N2O/(N2O+N2) flow rate ratio (R). The refractive index was varied from 1.60 to 2.10, and the cutoff photon energy at 10% transmittance (Eg/10) from 5.1 to 7.0 eV as the R changed from 0 to 1.0. The Al-O-N films were composed mainly of a mixture of Al2O3 and AlN. An aluminum oxynitride phase was also identified at R = 0.2 to 0.53. The Al-O-N films contained a (001)-oriented hexagonal AlN phase at R = 0.025, and the films were amorphous at R>0.05.
UR - http://www.scopus.com/inward/record.url?scp=0032682353&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032682353&partnerID=8YFLogxK
U2 - 10.1143/jjap.38.3668
DO - 10.1143/jjap.38.3668
M3 - Article
AN - SCOPUS:0032682353
SN - 0021-4922
VL - 38
SP - 3668
EP - 3674
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6 A
ER -