Pressure-induced change in the electronic structure of epitaxially strained La1-x Srx MnO3 thin films

K. Horiba, A. Maniwa, A. Chikamatsu, K. Yoshimatsu, H. Kumigashira, H. Wadati, A. Fujimori, S. Ueda, H. Yoshikawa, E. Ikenaga, J. J. Kim, K. Kobayashi, M. Oshima

研究成果: Article査読

11 被引用数 (Scopus)

抄録

We report the observation of pressure-induced changes in the electronic structures of La1-x Srx MnO3 (LSMO) by hard x-ray photoemission spectroscopy. Application of compressive and tensile strains results in the formation of a gap at the Fermi level (EF) and suppression of spectral weight at EF, respectively, across magnetic phase transitions. In contrast, no detectable change is observed in the absence of phase transitions even upon application of pressure. These results indicate that the change in the electronic structure of LSMO does not originate from the lattice distortions alone, but is induced by subtle interplay among the lattice, magnetic, and orbital degrees of freedom.

本文言語English
論文番号132406
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
80
13
DOI
出版ステータスPublished - 2009 10月 21
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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