TY - JOUR

T1 - Q factor enhancement of Si resonator by nonlinear damping

AU - Inomata, Naoki

AU - Saito, Kazuya

AU - Ono, Takahito

N1 - Funding Information:
Part of this work was performed in the Micro/Nanomachining Research Education Center (MNC) of Tohoku University, as well as in the Junichi Nishizawa Memorial Research Center of Tohoku University. This work was supported in part by a Grant-in-Aid for Scientific Research from the Japanese Ministry of Education, Culture, Sports, Science and Technology of Japan, also supported by Special Coordination Funds for Promoting Science and Technology, Formation of Innovation Center for Fusion of Advanced Technologies.
Publisher Copyright:
© 2016, Springer-Verlag Berlin Heidelberg.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - The nonlinear damping effect of thin cantilevered Si resonators with thicknesses of 100–1500 nm is investigated from the measurements of the Q factor change versus the vibration amplitude. The Q factor of the 100 nm-thick resonator largely increases as its vibration amplitude become larger due to its large nonlinear damping effect, while the Q factor increment of the thicker resonators (400, 800, 1500 nm of thickness) becomes smaller. The surface condition of the Si resonator also has an interaction to the amplitude dependence on the Q factor. The H2 annealing increases the Q factor change with increasing the amplitude, and the Ar plasma treatment is vice versa. These results show that Si resonators exhibit the nonlinear damping effect, and the large Q factor enhancement by this effect is markedly observed in the thin resonator. The nonlinear damping constant of the 100 nm-thick Si resonator was −1.12 × 1011 kg/m2s.

AB - The nonlinear damping effect of thin cantilevered Si resonators with thicknesses of 100–1500 nm is investigated from the measurements of the Q factor change versus the vibration amplitude. The Q factor of the 100 nm-thick resonator largely increases as its vibration amplitude become larger due to its large nonlinear damping effect, while the Q factor increment of the thicker resonators (400, 800, 1500 nm of thickness) becomes smaller. The surface condition of the Si resonator also has an interaction to the amplitude dependence on the Q factor. The H2 annealing increases the Q factor change with increasing the amplitude, and the Ar plasma treatment is vice versa. These results show that Si resonators exhibit the nonlinear damping effect, and the large Q factor enhancement by this effect is markedly observed in the thin resonator. The nonlinear damping constant of the 100 nm-thick Si resonator was −1.12 × 1011 kg/m2s.

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U2 - 10.1007/s00542-016-2827-1

DO - 10.1007/s00542-016-2827-1

M3 - Article

AN - SCOPUS:84954551550

SN - 0946-7076

VL - 23

SP - 1201

EP - 1205

JO - Microsystem Technologies

JF - Microsystem Technologies

IS - 5

ER -