@inproceedings{ce92b2f2af5e4ffda7b6d380d3ef5f3c,
title = "Quaternary 1T-2MTJ cell circuit for a high-density and a high-throughput nonvolatile bit-serial CAM",
abstract = "A compact quaternary cell circuit using a single MOS transistor and two magnetic tunnel junction devices (1T-2MTJ) is proposed for a high-density nonvolatile bit-serial content-addressable memory (CAM). The use of quaternary CAM-cell structure makes the search-cycle counts half, which achieves a high-speed search operation. Moreover, the power supply of a CAM word circuit is cut off whenever a mismatched cell is detected during search operation, which greatly reduces the static power dissipation. In fact, the average activation ratio of a 128-bit CAM word circuit is about 2.05 percent. The efficiency of the proposed CAM-cell structure is discussed in comparison with a conventional binary CAM-cell structure under a 0.14 um CMOS/MTJ technology.",
keywords = "Compact, Fine-Grain, Logic-in-Memory, Low-Power, MOS/MTJ-hybrid, MTJ, Magnetic Tunnel Junction, Power Gating, Spintronics",
author = "Shoun Matsunaga and Takahiro Hanyu",
year = "2012",
month = jul,
day = "30",
doi = "10.1109/ISMVL.2012.67",
language = "English",
isbn = "9780769546735",
series = "Proceedings of The International Symposium on Multiple-Valued Logic",
pages = "98--103",
booktitle = "Proceedings - IEEE 42nd International Symposium on Multiple-Valued Logic, ISMVL 2012",
note = "42nd IEEE International Symposium on Multiple-Valued Logic, ISMVL 2012 ; Conference date: 14-05-2012 Through 16-05-2012",
}